System Specification |
Process Type |
Thermal & plasma time divided ALD |
Gases Flow Type |
Lateral type(Traveling wave) |
Available Film |
Metal oxide thin film based O₂ Plasma
Metal oxide thin film based H₂O
Metal thin film based H₂ Plasma
|
Film Uniformity |
Al₂O₃ ± 1% on the 200x200 [mm²] square substrate |
Substrate Size & Temperature |
25 ~ 400 [℃] ± 1 [%] On The Substrate of 150x150[mm²] |
System Dimension ( W x L x H ) |
920 x 650 x 1100 (Substrate to ground) [mm] |
Base Pressure |
< 5.0 x 10-3 [Torr] |
Control System |
Provided laptop computer & Windows 10 based, advanced and basic GUIs with
Import/export of Excel compatible recipes and data |
Number of MFC |
Carrier & purge gas / 3[EA] & 2nd reactant gas / 2EA |
Facilities Requirements Specification |
Gases |
Ar or N₂ more than 4~6 [bar] |
Air |
Clean dry air or N2 more than 4~6 [bar] |
Power |
Ø1 / 220 [V] / 60 [Hz] / more than 80 [A] |
Vacuum Pump |
Needed vacuum oil rotary pump ≥1000 [L/min] |