Nexus T-Max™ Series

System Specification
Process Type Thermal & Plasma Enhanced Time Divided ALD
Gases Flow Type Dual Showerhead Gas Injection
Available Film Dielectric Film (High-K, Low-K)
Metal Oxide, Metal Sulfide, Metal
Deposition Rate Al2O3 ≥ 10Å/min
Film Uniformity Al2O3 ± 1% on the 12” Wafer
Substrate Size 6”,8” and 12” or Square Substrate
Substrate Temperature 25 ~ 250 ℃
Vacuum Control Capacitance Manometer & Throttle Valve
Base Pressure < 5.0 x 10-3 Torr
Facilities Requirements Specification
Gases Inert Gas, More than 4~6 Bar
Air CDA, More Than 4~6 Bar
Power of Mini ALD 3 Phase, 220V/380V, 50/60Hz, 125A
Vacuum Pump Needed Dry Pump