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T-Max PEALD Nexus PEALD System (T-Max) Introduction
 

T-Max PEALD

 
System overview
T-Max PEALD
  • T-Max PEALD
  • T-Max PEALD
    • Detail Specification
    No Item Description
    1 Chamber Type Square & Vertical
    2 Uniformity ≤±2% (Within 25point EE15mm)
    ≤±1% (Wafer to Wafer)
    3 Cycle Time ≤ 5ec/Cycle
    4 Growth Per Cycle ≤ 1.2Å/Cycle
    5 Deposition Rate ≥ 15Å/min (Ref, Al2O3)
    6 Tact Time (@50nm/1PM) ≤ 37min (Loading to Unloading)
    7 Transmittance ≥ 95% (50nm Thickness On Glass)
    8 Baser Pressure ≤ 1.0x10-3Torr (≤10min)
    9 Process Pressure 0.5~2 Torr
    10 Substrate Temperature Max. 4000℃, ≤±1%
    11 Materials Chamber: Al
    Heater : Al  or SUS Heater
    12 Gas Box Source Gas Line (3EA)
    Process Gas Line (5EA)
       - Ar, O2, N2, NH3 and 1 spare
    MFC : Max. 1000sccm
    13 RF Power Source RF 13.56MHz, CCP Type, 1kW
    14 O3 Generator TBD
    15 Vacuum Gauge ATM Switch
    Baratron Gauge(<10 Torr)
    Convectron Gauge (>10Torr)
    19 Pump Type Dry Pump : iH600 (8,635 L/min)
     
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