
No | Item | Description |
---|---|---|
1 | Chamber Type | Square & Vertical |
2 | Uniformity | ≤±2% (Within 25point EE15mm) ≤±1% (Wafer to Wafer) |
3 | Cycle Time | ≤ 5ec/Cycle |
4 | Growth Per Cycle | ≤ 1.2Å/Cycle |
5 | Deposition Rate | ≥ 15Å/min (Ref, Al2O3) |
6 | Tact Time (@50nm/1PM) | ≤ 37min (Loading to Unloading) |
7 | Transmittance | ≥ 95% (50nm Thickness On Glass) |
8 | Baser Pressure | ≤ 1.0x10-3Torr (≤10min) |
9 | Process Pressure | 0.5~2 Torr |
10 | Substrate Temperature | Max. 4000℃, ≤±1% |
11 | Materials | Chamber: Al Heater : Al or SUS Heater |
12 | Gas Box | Source Gas Line (3EA) Process Gas Line (5EA) - Ar, O2, N2, NH3 and 1 spare MFC : Max. 1000sccm |
13 | RF Power Source | RF 13.56MHz, CCP Type, 1kW |
14 | O3 Generator | TBD |
15 | Vacuum Gauge | ATM Switch |
Baratron Gauge(<10 Torr) | ||
Convectron Gauge (>10Torr) | ||
19 | Pump Type | Dry Pump : iH600 (8,635 L/min) |