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Appendix _ Nexus ALD _ Mini Thermal ALD

 
System overview
Mini Thermal ALD
  • Mini Thermal ALD
  • Mini Thermal ALD
  • Mini Thermal ALD
  • Detail Specification
    No Item Description
    1 Chamber Type Lateral type (Traveling wave)
    2 Reaction Type Using Thermal (H2O, DI)
    3 Substrate Size 8inch (200mm)
    4 Dimension (WxLxH) 800 x 480 x 540 mm
    5 Weight < 80kg
    6 Uniformity ≤±2% (Within 25point EE15mm)
    ≤±1% (Wafer to Waer)
    7 Cycle Time ≤ 10sec/Cycle
    8 Growth Per Cycle ≤ 1.2Å/Cycle
    9 Deposition Rate ≥ 7Å/min (Ref, Al2O3)
    10 RI Al2O3 : 1.55~1.65 / SiO2 : 1.4 ~ 1.5
    TiO2 : 1.9~2.0 and ETC
    11 Transmittance ≥ 95% (50nm Thickness On Glass)
    12 WVTR (@50nm) Single Layer : Low 10E-3 g/m2-day
    Nanolaminate : Low 10E-5 g/m2-day
    13 Base Pressure ≤ 1.0x10-3Torr (≤ 5min)
    14 Process Pressure 0.5~2 Torr
    15 Substrate Temperature Max. 400℃, ≤±1% (On Set Temperature)
    16 Materials Chamber: Al6061
    Heater : Block heater
    17 Available Deposition Film Metal Oxide by DI / O3
    Metal Sulfide by H2S
    18 O3 Generator (Option) O3 Generator _ 220g/cm3 _ 2L/min
    19 Vacuum Gauge ATM Switch
    Baratron Gauge(<10 Torr)
    20 Pump Type Oil Rotary Pump (<1000L/min)
    21 ETC By-pass Line at each Feeding Line
    Laptop Notebook Control