No | Item | Description |
---|---|---|
1 | Chamber Type | Lateral type (Traveling wave) |
2 | Reaction Type | Using Thermal (H2O, DI) |
3 | Substrate Size | 8inch (200mm) |
4 | Dimension (WxLxH) | 800 x 480 x 540 mm |
5 | Weight | < 80kg |
6 | Uniformity | ≤±2% (Within 25point EE15mm) ≤±1% (Wafer to Waer) |
7 | Cycle Time | ≤ 10sec/Cycle |
8 | Growth Per Cycle | ≤ 1.2Å/Cycle |
9 | Deposition Rate | ≥ 7Å/min (Ref, Al2O3) |
10 | RI | Al2O3 : 1.55~1.65 / SiO2 : 1.4 ~ 1.5 TiO2 : 1.9~2.0 and ETC |
11 | Transmittance | ≥ 95% (50nm Thickness On Glass) |
12 | WVTR (@50nm) | Single Layer : Low 10E-3 g/m2-day Nanolaminate : Low 10E-5 g/m2-day |
13 | Base Pressure | ≤ 1.0x10-3Torr (≤ 5min) |
14 | Process Pressure | 0.5~2 Torr |
15 | Substrate Temperature | Max. 400℃, ≤±1% (On Set Temperature) |
16 | Materials | Chamber: Al6061 Heater : Block heater |
17 | Available Deposition Film | Metal Oxide by DI / O3 Metal Sulfide by H2S |
18 | O3 Generator (Option) | O3 Generator _ 220g/cm3 _ 2L/min |
19 | Vacuum Gauge | ATM Switch |
Baratron Gauge(<10 Torr) | ||
20 | Pump Type | Oil Rotary Pump (<1000L/min) |
21 | ETC | By-pass Line at each Feeding Line Laptop Notebook Control |